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| UT3409_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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UNISONIC TECHNOLOGIES CO., LTD
UT3409
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
ï® DESCRIPTION
The UTC UT3409 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is suitable for use
as a load switch or in PWM applications.
ï® FEATURES
* RDS(ON) <130m⦠@VGS = -10V
* RDS(ON) < 200m⦠@VGS = -4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
ï® SYMBOL
Power MOSFET
ï® ORDERING INFORMATION
Ordering Number
Note:
UT3409G-AE2-R
UT3409G-AE3-R
UT3409G-AL3-R
Pin Assignment: S: Source
G: Gate
Package
SOT-23-3
SOT-23
SOT-323
D: Drain
Pin Assignment
1
2
3
S
G
D
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
Tape Reel
ï® MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
1 of 4
QW-R502-244.E
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