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UT3409 Datasheet, PDF (1/4 Pages) Unisonic Technologies – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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UNISONIC TECHNOLOGIES CO., LTD
UT3409
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
 DESCRIPTION
The UTC UT3409 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is suitable for use
as a load switch or in PWM applications.
 FEATURES
* RDS(ON) <130m⦠@VGS = -10V
* RDS(ON) < 200m⦠@VGS = -4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
 SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3409L-AE2-R
UT3409G-AE2-R
UT3409L-AE3-R
UT3409G-AE3-R
Package
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
 MARKING
34J
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., LTD
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QW-R502-244.D
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