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| UT2N10_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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UNISONIC TECHNOLOGIES CO., LTD
UT2N10
2 Amps,100 Volts
N-CHANNEL POWER MOSFET
ï® DESCRIPTION
The UTC UT2N10 is N-Channel enhancement mode silicon gate
power FET.it uses a special gate oxide designed to provide full rated
conductance at gate biases through 3V ~ 5V and facilitate true on-off
power control directly from logic circuit supply voltages.
The UTC UT2N10 is universally applied in logic level (5V) driving
sources, such as automotive switching, solenoid drivers and
programmable controllers.
ï® FEATURES
* RDS(ON) < 1.050⦠@ VGS=5V, ID=2A
* Design Optimized for 5V Gate Drives
* Can be Driven Directly from QMOS, NMOS, TTL Circuits
* Compatible with Automotive Drive Requirements
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
ï® SYMBOL
Power MOSFET
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