UT2N10 Datasheet, PDF (1/3 Pages) Unisonic Technologies – 2 Amps,100 Volts N-CHANNEL POWER MOSFET

UT2N10
Preliminary
2 Amps,100 Volts
N-CHANNEL POWER MOSFET
„ DESCRIPTION
The UTC UT2N10 is N-Channel enhancement mode silicon gate
power FET.it uses a special gate oxide designed to provide full rated
conductance at gate biases through 3V ~ 5V and facilitate true on-off
power control directly from logic circuit supply voltages.
The UTC UT2N10 is universally applied in logic level (5V) driving
sources, such as automotive switching, solenoid drivers and
programmable controllers.
„ FEATURES
* 2A, 100V
* R_DS(ON) = 1.050Ω
* Design Optimized for 5V Gate Drives
* Can be Driven Directly from QMOS, NMOS, TTL Circuits
* Compatible with Automotive Drive Requirements
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2N10L-TN3-R
UT2N10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
Package
TO-252
S: Source
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-511.a