UT2321_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD
UT2321
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
 DESCRIPTION
The UT2321 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
 FEATURES
* R_DS(ON) < 55mΩ @ V_GS=-4.5V, I_D=-2.4A
* R_DS(ON) < 80mΩ @ V_GS=-2.5V, I_D=-2.0A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
 SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
 ORDERING INFORMATION
Ordering Number
UT2321G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
 MARKING
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