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UT2321 Datasheet, PDF (1/4 Pages) Unisonic Technologies – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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UNISONIC TECHNOLOGIES CO., LTD
UT2321
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
 DESCRIPTION
The UT2321 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
 FEATURES
* RDS(ON)<55m⦠@VGS=-4.5V
* RDS(ON)<80m⦠@VGS=-2.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
 SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2321L-AE3-R
UT2321G-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
 MARKING
231
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-249.D
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