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UT2321 Datasheet, PDF (1/4 Pages) Unisonic Technologies – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
UT2321
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
„ DESCRIPTION
The UT2321 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„ FEATURES
* RDS(ON)<55mΩ @VGS=-4.5V
* RDS(ON)<80mΩ @VGS=-2.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
„ SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2321L-AE3-R
UT2321G-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
„ MARKING
231
L: Lead Free
G: Halogen Free
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Copyright © 2009 Unisonic Technologies Co., Ltd
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