UT2312_15 Datasheet, PDF(1/3 Page) Unisonic Technologies

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UT2312_15 Datasheet, PDF (1/3 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UT2312

5A, 20V N-CHANNEL

ENHANCEMENT MODE MOSFET

ï® DESCRIPTION

The UT2312 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

ï® FEATURES

* RDS(ON) < 33 mâ¦ @ VGS =4.5V, ID =5.0 A

* RDS(ON) < 40 mâ¦ @ VGS =2.5 V, ID =4.0 A

* Advanced trench process technology

* Excellent thermal and electrical capabilities

* High density cell design for ultra low on-resistance

ï® SYMBOL

3.Drain

Power MOSFET

2.Gate

1.Source

ï® ORDERING INFORMATION

Ordering Number

UT2312G-AE3-R

Note: Pin Assignment: G: Gate D: Drain

S: Source

Package

SOT-23

Pin Assignment

Packing

Tape Reel

ï® MARKING

www.unisonic.com.tw

1 of 3

QW-R502-205.F

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