UT2312 Datasheet, PDF (1/3 Pages) Unisonic Technologies – 20V N-CHANNEL ENHANCEMENT MODE MOSFET

UNISONIC TECHNOLOGIES CO., LTD
UT2312
20V N-CHANNEL
ENHANCEMENT MODE MOSFET
„ DESCRIPTION
The UT2312 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„ FEATURES
* RDS(ON) = 33 mΩ @VGS = 4.5 V
* RDS(ON) = 40 mΩ @VGS = 2.5 V
* Advanced trench process technology
* Excellent thermal and electrical capabilities
* High density cell design for ultra low on-resistance
„ SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2312L-AE3-R
UT2312G-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
„ MARKING
23N
L: Lead Free
G: Halogen Free
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