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| UP9T15G_15 Datasheet, PDF (1/5 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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UNISONIC TECHNOLOGIES CO., LTD
UP9T15G
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
ï® DESCRIPTION
The UP9T15G uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
ï® FEATURES
* VDS(V)=20V
* ID=12 .5A (VGS=4.5V)
* RDS(ON) < 50m⦠@ VGS =4.5 V, ID =6 A
* RDS(ON) < 80m⦠@ VGS =2.5 V, ID =5.2 A
ï® SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ï® ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UP9T15GL-TN3-R
UP9T15GP-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
1
2
3
GD S
Packing
Tape Reel
ï® MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-208.B
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