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| UDN302 Datasheet, PDF (1/4 Pages) Unisonic Technologies – P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET | |||
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UNISONIC TECHNOLOGIES CO., LTD
UDN302
P-CHANNEL 2.5V SPECIFIED
POWERTRENCH MOSFET
 DESCRIPTION
The UDN302 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
 FEATURES
* RDS(ON)=55m⦠@ VGS=-4.5V
* RDS(ON)=80m⦠@ VGS=-2.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
 SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UDN302L-AE3-R
UDN302G-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
 MARKING
NC03
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-278.B
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