TIP41C Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

UTC TIP41C
NPNEPITAXIAL PLANAR TRANSISTOR
NPN EXPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC TIP41C is a NPN expitaxial planar transistor,
designed for using in general purpose amplifier and switching
applications.
FEATURE
1
*Complement to tip42C
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector Base Voltage
Collector to Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25°C)
Collector Dissipation(Ta=25°C)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
Ic
Ic
IB
Pc
Pc
Tj
Tstg
VALUE
100
100
5
6
10
2
65
2
150
-65 ~ +150
UNIT
V
V
V
A
A
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS(Tc=25°C)
PARAMETER
SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Emitter Sustaining voltage(*)
BVCEO
IC=30mA,IB=0
100
V
Collector cutoff Current
ICEO
VCE=60V,IB=0
0.7 mA
Collector Cutoff Current
ICES
VCE=100V,VEB=0
400 µA
Emitter Cutoff current
IEBO
VBE=5V,Ic=0
1
mA
Collector-Emitter Saturation Voltage(*) VCE(sat) IC=6A,IB=600mA
1.5
V
Base-Emitter On Voltage(*)
VBE(on) IC=6A,VCE=4V
2.0
V
DC Current Gain(*)
hFE
IC=300mA,VCE=4V
30
IC=3A,VCE=4V
15
75
Current gain Bandwidth Product
fT
VCE=10V,Ic=500mA,
3
MHz
f=1MHz
*Pulse Test: PW<=300µs, Duty Cycle<=2%
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R203-008,A