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| TIP122 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, HAMMER DRIVER,PULSE MOTOR DRIVER) | |||
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UTC TIP122
NPNEPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP122 is a NPN epitaxial transistor, designed
for use in general purpose amplifier low-speed switching
applications.
1
TO-126
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
Ic
Collector Dissipation (Tc=25â)
PC
Storage Temperature
Tstg
Junction Temperature
Tj
1:EMITTER 2:COLLECTOR 3:BASE
RATINGS
100
100
5
5
40
-55 ~ +150
150
UNIT
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
Collector-Emitter Breakdown Voltage
BVCEO
IC=100mA
100
Collector Cut-Off Current
ICBO
VCB=100V
Collector-Cut-Off Current
ICEO
VCE=50V
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
IEBO
VCE(SAT)1
VEB=5V
IC=3A, IB=12mA
Collector-Emitter Saturation Voltage
VCE(SAT)2
IC=5A, IB=20mA
Base-Emitter Saturation Voltage
VBE(ON)
VCE=3V, IC=3A
DC Current Gain
hFE
IC=500mA, VCE=3V
IC=3A, VCE=3V
1000
1000
TYP.
MAX.
200
500
2
2
4
2.5
UNIT
V
uA
uA
mA
V
V
V
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R204-016,A
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