TIP110A Datasheet, PDF (1/3 Pages) First Components International – TTIP110A PNP Epitaxial Silicon Transistor

UTCTIP110A PNPEXPITAXIAL PLANAR TRANSISTOR
LOW SATURATION VOLTAGE PNP
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC TIP110A is designed for using in general purpose
amplifier and switching applications.
FEATURE
1
*Low VCE(sat)
*High current gain
MAXIMUM RATINGS(Ta=25°C)
CHARACTERISTICS
Collector Base Voltage
Collector to Emitter Voltage
Emitter To base Voltage
Collector Current
Junction Temperature
Storage Temperature
Total Power Dissipations
SYMBOL
VCBO
VCEO
VEBO
IC
Tj
Tstg
PD
CHARACTERISTICS(Ta=25°C)
SYMBOL
TEST CONDITIONS
MIN
BVCEO
IC=100mA
30
ICBO
VCB=40V
ICEO
VCE=20V
IEBO
VEB=5V
VCE(SAT)
IC=10A,IB=10mA
VBE(ON)
IC=5mA,VCE=2.0V
hFE1
IC=500mA,VCE=2.0V
2
hFE2
IC=10A,VCE=2.0V
1
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
VALUE
40
30
5
10
150(Max)
-55 ~ +150
65
UNITS
V
V
V
A
°C
°C
W
TYP
20
MAX
1
1
100
2.0
2.0
60
60
UNIT
V
µA
µA
nA
V
V
K
K
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R203-004,A