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TIP107 Datasheet, PDF (1/3 Pages) Unisonic Technologies – PNP EPITAXIAL TRANSISTOR
UTC TIP107
PNPEPITAXIAL PLANAR TRANSISTOR
PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP107 is designed for using in general purpose
amplifier and switching applications.
FEATURE
*Low VCE(sat)
1
*High current gain
*Complementary to TIP102
TO-220
Absolute Maximum Ratings(T C =25℃)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
ICP
Base Current (DC)
IB
Collector Dissipation
Pc
Junction Temperature
TJ
Storage Temperature
TSTG
1:BASE 2:COLLECTOR 3:EMITTER
Value
-100
-100
-5
-8
-15
-1
80
150
- 65~150
Units
V
V
V
A
A
A
W
℃
℃
Electrical Characteristics(TC =25℃)
Parameter
Symbol
TEST CONDITIONS
Collector-Emitter Sustaining Voltage VCEO(SUS) IC = -30mA, IB = 0
Collector Cut-off Current
ICEO
VCE= - 50V, IB=0
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
COb
VCB= - 100V, IE=0
VBE= - 5V, IC=0
VCE= - 4V, IC= - 3A
VCE= - 4V, IC= - 8A
IC= - 3A, IB= - 6mA
IC= - 8A, IB= - 80mA
VCE= - 4V, IC= - 8A
VCB= -10V, IE=0, f=0.1MHZ
MIN. MAX. UNIT
-100
V
50 µA
-50 µA
-2 mA
1000 20000
200
-2
V
-2.5 V
-2.8 V
300 pF
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R203-023,A