S8050 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (PNP)

UTC S8050 NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC S8050 is a low voltage high current small
signal NPN transistor, designed for Class B push-pull
audio amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to S8550
1
TO-92
1:EMITTER 2:BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
20
Emitter-Base Voltage
VEBO
5
Collector Dissipation(Ta=25°C)
Pc
1
Collector Current
Ic
700
Junction Temperature
Tj
150
Storage Temperature
TSTG
-65 ~ +150
UNIT
V
V
V
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO
Ic=100µA,IE=0
30
Collector-Emitter Breakdown Voltage BVCEO
Ic=1mA,IB=0
20
Emitter-Base Breakdown Voltage
BVEBO
IE=100µA,Ic=0
5
Collector Cut-Off Current
ICBO
VCB=30V,IE=0
Emitter Cut-Off Current
IEBO
VEB=5V,Ic=0
DC Current Gain(note)
hFE1
VCE=1V,Ic=1mA
100
hFE2
VCE=1V,Ic=150 mA
120
hFE3
VCE=1V,Ic=500mA
40
Collector-Emitter Saturation Voltage VCE(sat)
Ic=500mA,IB=50mA
Base-Emitter Saturation Voltage
VBE(sat)
Ic=500mA,IB=50mA
Base-Emitter Saturation Voltage
VBE
VCE=1V,Ic=10mA
Current Gain Bandwidth Product
fT
VCE=10V,Ic=50mA
100
Output Capacitance
Cob
VCB=10V,IE=0
f=1MHz
TYP
110
9.0
MAX
1
100
400
0.5
1.2
1.0
UNIT
V
V
V
µA
nA
V
V
V
MHz
pF
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R201-013,A