PZTA42 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistor

UTCPZTA42/43 NPNEPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC PZTA42/43 are high voltage transistors,
designed for telephone switch and high voltage
switch.
FEATURES
*Collector-Emitter voltage:
VCEO=300V(UTC PZTA42)
VCEO=200V(UTC PZTA43)
*High current gain
*Complement to UTC PZTA92/93
*Collector Power Dissipation:
Pc(max)=1000mW
3
2
1
4
SOT-223
1:EMITTER 2,4:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
UTC PZTA42
VCBO
UTC PZTA43
Collector-Emitter Voltage
UTC PZTA42
VCEO
UTC PZTA43
Emitter-Base Voltage
VEBO
Collector Power Dissipation
Pc
Collector Current
Ic
Junction Temperature
Tj
Storage Temperature
TSTG
VALUE
300
200
300
200
6
1000
500
150
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO
Ic=100µA,IE=0
UTC PZTA42
300
UTC PZTA43
200
Collector-Emitter Breakdown Voltage BVCEO
Ic=1mA,IB=0
UTC PZTA42
300
UTC PZTA43
200
Emitter-Base Breakdown Voltage
BVEBO
IE=100µA,Ic=0
6
TYP
MAX
UNIT
V
V
V
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R207-005,B