PZTA14 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN Darlington transistor

UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC PZTA14 is a Darlington transistor.
FEATURES
*Collector-Emitter Voltage: VCES = 30V
*Collector Power Dissipation: Pc (max) = 1000 mW
3
2
1
4
SOT-223
1:EMITTER 2,4:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
(Ta=25°C)
SYMBOL
VCBO
VCES
VEBO
Pc
Ic
Tj
TSTG
VALUE
30
30
10
1000
500
150
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Breakdown Voltage
BVCES
Ic=100µA,IB=0
Collector Cut-Off Current
ICBO
VCB=30V,IE=0
Emitter Cut-Off Current
IEBO
VEB=10V,Ic=0
DC Current Gain
hFE
VCE=5V,Ic=100mA
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=100mA,IB=0.1mA
Base-Emitter on Voltage
VBE(on)
VCE=5V,Ic=100mA
Current Gain Bandwidth Product
fT
VCE=5V,Ic=10mA,
f=100MHz
Pulse test: Pulse Width<300µs, Duty Cycle=2%
UNIT
V
V
V
mW
mA
°C
°C
MIN MAX
30
100
100
20000
1.5
2.0
125
UNIT
V
nA
nA
V
V
MHz
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R207-004,B