MPSA06 Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN general purpose transistor

UTC MPSA06/56
NPN MPSA06
PNP MPSA56
FEATURES
*Collector-Emitter Voltage: VCEO=80V
*Collector Dissipation: P_D=625mW
AMPLIFIER TRANSISTOR
1
TO-92
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
80
Collector-emitter voltage
VCEO
80
Emitter-base voltage
VEBO
4
Collector current - Continuous
Ic
500
Total device dissipation, @T_A=25°C
PD
625
Derate above 25°C
5
Total device dissipation, @T_C=25°C
PD
Derate above 25°C
1500
12
Junction Temperature
Tj
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mA
mW
mW/°C
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX
Thermal resistance, junction to ambient
RθJA (note)
200
Thermal resistance, junction to case
RθJC
83.3
Note: RθJA is measured with the device soldered into a typical printed circuit board.
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-emitter breakdown voltage
(note 1)
V_(BR)CEO
I_C=1.0mA, I_B=0
80
Emitter-base breakdown voltage
V_(BR)EBO
I_E=100µA, Ic=0
4
Collector cutoff current
I_CES
V_CE=60V, I_B=0
Collector cutoff current
I_CBO
V_CB=80V, I_E=0
TYP
MAX
0.1
0.1
UNIT
V
V
µA
µA
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
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