MMDT8150 Datasheet, PDF (1/2 Pages) Unisonic Technologies – LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD
MMDT8150
Preliminary NPN EPITAXIAL SILICON TRANSISTOR
LOW VCESAT NPN EPITAXIAL
PLANAR TRANSISTOR
„ DESCRIPTION
The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It
has low V_CE(SAT) performance and the transistor elements are
independent to eliminate interference.
„ FEATURES
* Low V_CE(SAT), V_CE(SAT)=40mV (typ.)@I_C / I_B = 50mA / 2.5mA
* Transistor elements are independent to eliminate interference.
* Mounting cost and area can be cut in half.
„ EQUIVALENT CIRCUIT
6
5
4
Tr1
Tr2
1
2
3
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMDT8150L-AL6-R
MMDT8150G-AL6-R
Package
SOT-363
MMDT8150L-AL6-R
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) R: Tape Reel
(2) AL6: SOT-363
(3) Halogen Free, L: Lead Free
„ MARKING
T81
G: Halogen Free
L: Lead Free
Packing
Tape Reel
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