MMBTA14 Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN (DARLINGTON AMPLIFIER TRANSISTOR)

UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MMBTA14 is a Darlington transistor.
FEATURES
*Collector-Emitter Voltage: VCES = 30V
*Collector Dissipation: Pc (mas) = 350 mW
MARKING
2
1
3
1N
SOT-23
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCES
30
V
Emitter-Base Voltage
VEBO
10
V
Collector Dissipation (Tc=25°C)
Pc
350
mW
Collector Current
Ic
500
mA
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Breakdown Voltage
BVCES
Ic=100µA,IB=0
Collector Cut-Off Current
ICBO
VCB=30V,IE=0
Emitter Cut-Off Current
IEBO
VEB=10V,Ic=0
DC Current Gain
hFE
VCE=5V,Ic=100mA
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=100mA,IB=0.1mA
Base-Emitter on Voltage
VBE(on)
VCE=5V,Ic=100mA
Current Gain Bandwidth Product
fT
VCE=5V,Ic=10mA,
f=100MHz
Pulse test: Pulse Width<300µs, Duty Cycle=2%
MIN MAX
30
100
100
20000
1.5
2.0
125
UNIT
V
nA
nA
V
V
MHz
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R206-038,A