MMBTA13 Datasheet, PDF (1/3 Pages) Transys Electronics – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

UTC MMBTA13
NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MMBTA13 is a Darlington transistor.
FEATURES
*Collector-Emitter Voltage: VCES = 30V
*Collector Dissipation: Pc (mas) = 350 mW
MARKING
2
1
3
1M
SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCES
Emitter-Base Voltage
VEBO
Collector Dissipation
Pc
Collector Current
Ic
Junction Temperature
Tj
Storage Temperature
TSTG
1: EMITTER 2: BASE 3: COLLECTOR
VALUE
30
30
10
350
500
150
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Breakdown Voltage
BVCES
Ic=100µA,IB=0
Collector Cut-Off Current
ICBO
VCB=30V,IE=0
Emitter Cut-Off Current
IEBO
VEB=10V,Ic=0
DC Current Gain
hFE
VCE=5V,Ic=100mA
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=100mA,IB=0.1mA
Base-Emitter on Voltage
VBE(on)
VCE=5V,Ic=100mA
Current Gain Bandwidth Product
fT
VCE=5V,Ic=10mA,
f=100MHz
Pulse test: Pulse Width<300µs, Duty Cycle=2%
MIN MAX
30
100
100
10000
1.5
2.0
125
UNIT
V
nA
nA
V
V
MHz
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R206-006,B