MMBT9015 Datasheet, PDF (1/3 Pages) Unisonic Technologies – PNP EPITAXIAL SILICON TRANSISTOR

UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL &
LOW NOISE
FEATURES
*High total power dissipation. (450mW)
*Excellent hFE linearity.
*Complementary to UTC MMBT9014
MARKING
15
2
1
3
SOT-23
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
-50
Collector-emitter voltage
VCEO
-45
Emitter-base voltage
VEBO
-5
Collector current
Ic
-100
Collector dissipation
Pc
225
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=-100µA, IE=0
-50
Collector-emitter breakdown voltage BVCEO
Ic=-1mA, IB=0
-45
Emitter-base breakdown voltage
BVEBO
IE=-100µA, Ic=0
-5
Collector cutoff current
ICBO
VCB=-50V, IE=0
Emitter cutoff current
IEBO
VEB=-5V, IC=0
DC current gain
hFE
VCE=-5V, Ic=-1mA
60
Collector-emitter saturation voltage VCE(sat)
Ic=-100mA, IB=-5mA
Base-emitter saturation voltage
VBE(sat)
Ic=-100mA, IB=-5mA
Base-emitter on voltage
VBE(on)
VCE=-5V, Ic=-2mA
-0.6
Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Current gain-Bandwidth Porduct
fT
VCE=-5V, Ic=-10mA
100
Noise Figure
NF
VCE=-5V, Ic=-0.2mA
f=1KHz, Rs=1KΩ
TYP
200
-0.2
-0.82
-0.65
4.5
190
0.7
MAX
-50
-100
600
-0.7
-1.0
-0.75
7.0
10
UNIT
V
V
V
nA
nA
V
V
V
pF
MHz
dB
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R206-023,A