MMBT5088 Datasheet, PDF (1/6 Pages) Samsung semiconductor – NPN (LOW NOISE TRANSISTOR)

UTC MMBT5088 / MMBT5089
NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The device is designed for low noise, high gain, general
purpose amplifier applications at collector currents from
1µA to 50mA.
MARKING(MMBT5088)
2
1
1Q
3
MARKING(MMBT5089)
SOT-23
1R
1:EMITTER 2:BASE 3:COLLECTOR
MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
RATING
SYMBOL
MMBT5088 MMBT5089
UNIT
Collector-Emitter voltage
VCEO
30
25
V
Collector-Base voltage
VCBO
35
30
V
Emitter-base voltage
VEBO
4.5
V
Collector current-continuous
Ic
100
mA
Operating and Storage
Tj, Tstg
-55 ~ +150
°C
Junction Temperature Range
Note 1: These ratings are based on a maximum junction temperature of 150 degrees C.
Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
Total Device Dissipation
P_D
Derate above 25°C
Thermal Resistance, Junction to
RθJA
Ambient
MAX
350
2.8
357
UNIT
mW
mW/°C
°C/W
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R206-033,A