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MMBF170 Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
MMBF170
Preliminary
0.5A, 60V N-CHANNEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
„ DESCRIPTION
The UTC MMBF170 is an N-channel enhancement MOSFET
using UTC’s advanced technology to provide the customers with
perfect RDS(ON), low input capacitance, low gate threshold voltage
and high switching speed.
„ FEATURES
* RDS(ON)<5mΩ @ VGS=10V,ID=0.2A
* High Switching Speed
* Low Input Capacitance(typical 22pF)
„ SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMBF170L-AE2-R
MMBF170G-AE2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
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