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| MJE13003_15 Datasheet, PDF (1/9 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR | |||
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UNISONIC TECHNOLOGIES CO., LTD
MJE13003
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
ï® DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
ï® FEATURES
* Reverse biased SOA with inductive load @ TC=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C.
* 700V blocking capability
ï® APPLICATIONS
* Switching regulatorâs, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R204-004.T
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