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MJE13003-TO-126 Datasheet, PDF (1/7 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR | |||
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UNISONIC TECHNOLOGIES CO., LTD
MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for highâvoltage, highâspeed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE .
1
FEATURES
* Reverse Biased SOA with Inductive Load @ Tc=100Ä
* Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100Ä
Typical tc = 290ns @ 1A, 100Ä.
* 700V Blocking Capability
TO-126
APPLICATIONS
* Switching Regulatorâs, Inverters
* Motor Controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MJE13003-x-T60-F-K
MJE13003L-x-T60-F-K
Note: x: Rank, refer to Classification of hFE1.
*Pb-free plating product number: MJE13003L
Package
Pin Assignment
1 23
TO-126 B C E
Packing
Bulk
MJE13003L-x-T60-F-K
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1)K: Bulk
(2) refer to Pin Assignment
(3) T60: TO-126
(4) x: refer to Classification of hFE1
(5) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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