MJE13002 Datasheet, PDF (1/7 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,300-400V,40W)

UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON POWER TRANSISTOR
The UTC MJE13002 designed for use in high–volatge,high
speed,power switching in inductive circuit, It is particularly suited
for 115 and 220V switchmode applications such as switching
regulator’s,inverters,DC-DC converter,Motor control,
Solenoid/Relay drivers and deflection circuits.
FEATURES
*Collector-Emitter Sustaining Voltage:
VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage:
1
VCE(sat)=1.0V(Max.) @Ic=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.
TO-126
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current- Continuous
- Peak (1)
Base Current – Continuous
- Peak (1)
Emitter Current – Continuous
- Peak (1)
Total Power Dissipation @ TA=25℃
Derate above 25℃
Total Power Dissipation @ TC=25℃
Derate above 25℃
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO (sus)
VCEV
VEBO
Ic
ICM
IB
IBM
IE
IEM
PD
PD
Tj , Tstg
THERMAL CHARACTERISTICS
CHARACTERISTIC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Load Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
RATING
300
600
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
-65 to +150
UNIT
V
V
V
A
A
A
Watts
MW/℃
Watts
MW/℃
℃
SYMBOL
RθJC
RθJA
TL
MAX
3.12
89
275
UNIT
℃/W
℃/W
℃
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-014,B