MJD210 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – D-PAK for Surface Mount Applications

UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
PNP SILICON DPAK FOR SURFACE
MOUNT APPLICATIONS
DESCRIPTION
The UTC MJD210 is designed for low voltage,
low-power, high-gain audio amplifier applications.
FEATURE
*Collector-Emitter Sustaining Voltage
VCEO(sus) =25V (Min) @ IC =10mA
*High DC Current Gain
h_FE =70 (Min) @ IC=500mA
=45 (Min) @ IC=2A
=10 (Min) @ IC=5A
*Lead Formed for Surface Mount Applications in
Plastic Sleeves (No Suffix)
*Straight Lead Version in Plastic Sleeves (“-1” Suffix)
*Lead Formed Version in 16mm Tape and Reel
(“T4” Suffix)
*Low Collector – Emitter Saturation Voltage
VCE(sat) = 0.3V (Max) @ IC =500mA
= 0.75V (Max) @ IC = 2.0 A
*High Current-Gain-Bandwidth Product
fT = 65 MHz (Min) @ IC = 100 mA
*Annular Construction for Low Leakage
ICBO = 100 nA @ Rated VCB
1
TO-251
1: BASE 2: COLLECTOR 3: EMITTER
MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Peak
Base Current
Total Device Dissipation @ TC=25°C
Derate above 25°C
Total Device Dissipation @ TA=25°C*
Derate above 25°C
Operating and Storage Junction Temperature Range
SYMBOL
VCB
VCEO
VEB
IC
IB
PD
PD
TJ, Tstg
VALUE
40
25
7
5
10
1
12.5
0.1
1.4
0.011
-65 to +150
UNIT
V
V
V
A
A
W
W/°C
W
W/°C
°C
THERMAL CHARACTERISTICS
CHARACTERISTIC
Thermal Resistance, Junction to Case
Junction to Ambient*
SYMBOL
RθJC
RθJA
UTC UNISONIC TECHNOLOGIES
MAX
10
89.3
UNIT
°C/W
°C/W
CO., LTD. ¹
QW-R213-001,A