MCR101 Datasheet, PDF (1/4 Pages) Unisonic Technologies – SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS

UTC MCR101
SCR
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
PNPN devices designed for high volume,
line-powered consumer applications such as relay
and lamp drivers, small motor controls, gate drivers
for larger thyristors, and sensing and detection
circuits. Supplied in an inexpensive plastic TO-92
package which is readily adaptable for use in
automatic insertion equipment.
DESCRIPTION
*Sensitive Gate Allows Triggering by Micro controllers
and Other Logic circuits
*Blocking Voltage to 600V
*On-State Current Rating of 0.8A RMS at 80°C
*High Surge Current Capability – 10A
*Minimum and Maximum Values of IGT, VGT and IH
Specified for Ease of Design
*Immunity to dV/dt – 20V/µsec Minimum at 110°C
*Glass-Passivated Surface for Reliability and
Uniformity
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Lead Solder Temperature
(<1/16” from case, 10 secs max)
1
TO-92
1: GATE 2: ANODE 3:CATHODE:
SYMBOL
R_θJC
R_θJA
T_L
MAX
75
200
260
UNIT
°C/W
°C/W
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak Repetitive Off-State Voltage(note)
(T_J=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open)
MCR101-4
MCR101-6
MCR101-8
On-Sate RMS Current
(Tc=80°C) 180° Condition Angles
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, T_J=25°C)
SYMBOL
VDRM,VRRM
IT(RMS)
ITSM
MAX
200
400
600
0.8
10
UNIT
V
A
A
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R301-009,B