K1109 Datasheet, PDF (1/2 Pages) Unisonic Technologies – N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

UTCK1109 JUNCTION FIELD EFFECT TRANSISTOR
N-CHANNEL JFET FOR
ELECTRET CONDENSER
MICROPHONE
DESCRIPTION
The UTC K1109 is N-channel JFET for electret
condenser microphone.
FEATURES
*High gm implies low transfer loss
*Built-in gate-source diode and resistor implies fast
power on settling time
2
1
3
SOT-113
1: SOURCE 2: DRAIN 3: GATE
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDSX
20
V
Gate-Drain Voltage
VGDO
-20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PT
80
mW
Junction Temperature
Tj
125
°C
Storage Temperature
TSTG
-55 ~ +125
°C
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain Current
IDSS
VDS=5.0V,VGS=0
40
Gate Off Voltage
VGS(OFF)
VDS=5.0V,ID=1.0µA
-0.1
Forward Transfer Admittance
lYFS1l
VDS=5.0V,ID=30µA,f=1kHz 350
Forward Transfer Admittance
lYFS2l
VDS=5.0V, VGS=0,f=1kHz
350
Input Capacitance
Ciss
VDS=5.0V,VGS=0,f=1.0MHz
Noise Voltage
NV
TYP
480
1600
7.0
1.8
MAX
600
-1.0
8.0
3.0
UNIT
µA
V
µS
µS
pF
V
CLASSIFICATION OF IDSS
RANK
RANGE
J34
90-180
J35
150-300
J36
200-450
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R210-002,A