HLB122 Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR

UTC HLB122
NPN EPITAXIAL SILICON TRANSISTOR
NPN TRIPLE DIFFUSED PLANAR TYPE
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC HLB122 is a medium power transistor
designed for use in switching applications.
FEATURES
* High breakdown voltage
* Low collector saturation voltage
* Fast switching speed
1
TO-251
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Total Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CF
I_B
I_BP
P_C
T_J
T_STG
*Pb-free plating product number:HLB122L
RATINGS
600
400
6
800
1600
100
200
20
150
-40 ~ +150
UNIT
V
V
V
mA
mA
mA
mA
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_C = 100µA
I_C = 10mA
I_E = 10µA
V_CB = 600V
600
V
400
V
6
V
10 µA
Collector Cutoff Current
I_CEO
V_CB = 400V
10 µA
Emitter Cutoff Current
I_EBO
V_EB = 6V
10 µA
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Fall Time
*V_{CE (sat) 1} I_C = 100mA, I_B = 20mA
*V_{CE (sat) 2} I_C = 300mA, I_B = 60mA
*V_{BE (sat)} I_C = 100mA, I_B = 20mA
*h_FE1 V_CE = 10V, I_C = 0.1A
10
*h_FE2 V_CE = 10V, I_C = 0.5A
10
T_f
V_CC = 100V, I_C= 0.3A, I_B1= -I_B2= 0.06A
400 mV
800 mV
1
V
40
0.6 µS
*Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
www.unisonic.com.tw
QW-R213-014,A