HLB121 Datasheet, PDF (1/2 Pages) Unisonic Technologies – NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR

UTC HLB121
NPN EPITAXIAL SILICON TRANSISTOR
NPN TRIPLE DIFFUSED PLANAR TYPE
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC HLB121 is a medium power transistor
designed for use in switching applications.
FEATURES
* High breakdown voltage
* Low collector saturation voltage
* Fast switching speed
1
TO-251
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number:HLB121L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Total Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
I_BP
P_C
T_J
T_STG
RATINGS
600
400
6
300
600
40
100
10
150
-40 ~ +150
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BV_CBO I_C = 100µA
600
Collector-Emitter Breakdown Voltage BV_CEO I_C = 10mA
400
Emitter-Base Breakdown Voltage
BV_EBO I_E = 10µA
6
Collector Cutoff Current
I_CBO
V_CB = 550V
Collector Cutoff Current
I_CEO
V_CB = 400V
Emitter Cutoff Current
I_EBO
V_EB = 6V
C-E Saturation Voltage
*V_{CE (sat) 1} I_C = 50mA, I_B = 10mA
*V_{CE (sat) 2} I_C = 100mA, I_B = 20mA
B-E Saturation Voltage
*V_{BE (sat)} I_C = 50mA, I_B = 10mA
DC Current Gain
*h_FE1 V_CE = 10V, I_C = 10mA
8
*h_FE2 V_CE = 10V, I_C = 50mA
10
*Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
UNIT
V
V
V
mA
mA
mA
mA
W
℃
℃
TYP MAX UNIT
V
V
V
10
µA
10
µA
10
µA
400 mV
750 mV
1
V
36
1
QW-R213-015,A