HE8550-TO-92 Datasheet, PDF (1/2 Pages) Unisonic Technologies – PNP EPITAXIAL SILIC ON TRANSISTOR

UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull
2W audio amplifier for portable radio and general purpose
applications.
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC HE8050
1
TO-92
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-25
Emitter-Base Voltage
VEBO
-6
Collector Dissipation(Ta=25℃)
Pc
1
Collector Current
Ic
-1.5
Junction Temperature
Tj
150
Storage Temperature
TSTG
-65 ~ +150
UNIT
V
V
V
W
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO
Ic=-100µA,IE=0
-40
Collector-Emitter Breakdown Voltage BVCEO
Ic=-2mA,IB=0
-25
Emitter-Base Breakdown Voltage
BVEBO
IE=-100µA,Ic=0
-6
Collector Cut-Off Current
ICBO
VCB=-35V,IE=0
Emitter Cut-Off Current
IEBO
VEB=-6V,Ic=0
DC Current Gain(note)
hFE1
VCE=-1V,Ic=-5mA
45
hFE2
VCE=-1V,Ic=-100mA
85
hFE3
VCE=-1V,Ic=-800mA
40
Collector-Emitter Saturation Voltage VCE(sat)
Ic=-800mA,IB=-80mA
Base-Emitter Saturation Voltage
VBE(sat)
Ic=-800mA,IB=-80mA
Base-Emitter Voltage
VBE
VCE=-1V,Ic=-10mA
Current Gain Bandwidth Product
fT
VCE=-10V,Ic=-50mA
100
Output Capacitance
Cob
VCB=-10V,IE=0
f=1MHz
TYP
170
160
80
-0.28
-0.98
-0.66
190
9.0
MAX
-100
-100
500
-0.5
-1.2
-1.0
UNIT
V
V
V
nA
nA
V
V
V
MHz
pF
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R201-010,A