F2N60 Datasheet, PDF(1/6 Page) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

F2N60 Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

F2N60

2A, 600V N-CHANNEL

POWER MOSFET

ï® DESCRIPTION

The UTC F2N60 is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching time,

low gate charge, low on-state resistance and have a high rugged

avalanche characteristics. This power MOSFET is usually used at

high speed switching applications in power supplies, PWM motor

controls, high efficient DC to DC converters and bridge circuits.

ï® FEATURES

* RDS(ON) = 5â¦@VGS = 10V

* Ultra Low gate charge (typical 16nC)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

ï® SYMBOL

Power MOSFET

ï® ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

F2N60L-TN3-T

F2N60G-TN3-T

F2N60L-TN3-R

F2N60G-TN3-R

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

TO-252

Pin Assignment

Packing

Tube

Tape Reel

www.unisonic.com.tw

1 of 6

QW-R502-952.A

▷