D965SS Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

UTC D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
*Collector current up to 5A
* D965SS : Collector-Emitter voltage up to 20 V
* D965ASS : Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
MARKING(D965SS) MARKING(D965ASS)
D65
D65A
2
1
3
SOT-23
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
40
Collector-emitter voltage
D965SS
VCEO
20
D965ASS
30
Emitter-base voltage
VEBO
7
Collector dissipation(Ta=25°C)
Pc
750
Collector current
Ic
5
Junction Temperature
Tj
150
Storage Temperature
TSTG
-65 ~ +150
UNIT
V
V
V
mW
A
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
BVCBO Ic=100µA,IE=0
40
Collector-emitter breakdown voltage
Ic=1mA,IB=0
D965SS
BVCEO
20
D965ASS
30
Emitter-base breakdown voltage
BVEBO IE=10µA,Ic=0
7
Collector cut-off current
ICBO VCB=10V,IE=0
Emitter cut-off current
IEBO VEB=7V,Ic=0
TYP
MAX UNIT
V
V
V
100 nA
100 nA
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R206-016,B