D45H2_15 Datasheet, PDF (1/3 Pages) Unisonic Technologies – PNP EXPITAXIAL SILICON TRANSISTOR

UTC D45H2
PNPEXPITAXIAL SILICON TRANSISTOR
PNP EXPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC D45H2 is a general purpose power application
and switching.
FEATURE
1
*Low Collector-Emitter Saturation Voltage
VCE(sat)=-1v(MAX)@-15A
*Fast Switching Speeds
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
PARAMETER
SYMBOL
Collector to Emitter Voltage
VCEO
Emitter To Base Voltage
VEBO
Collector Current(DC)
IC
Collector Dissipation(Tc=25°C)
Pc
Collector Dissipation(Ta=25°C)
Pc
Junction Temperature
Tj
Storage Temperature
Tstg
*PW<=10mS,Duty Cycle<=50%
VALUE
-30
-5
-10
50
1.67
150
-55 ~ +150
UNIT
V
V
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Cutoff Current
ICES
VCE=Rated ; VCEO,VEB=0
Emitter Cutoff current
IEBO
VEB=-5V,Ic=0
Collector Emitter Saturation
VCE(SAT) IC=-10A,IB=-0.1A
Voltage
Base Emitter Saturation Voltage VBE(SAT) IC=-10A,IB=-1A
DC Current Gain
hFE1
IC=-10A,VCE=-1V
Current Gain Bandwidth Product
FT
VCE=-10V,IC=-0.5A
Output Capacitance
CCB
VCB=-10V,f=1MHZ
Turn On Time
ton
Ic=-5A,IB=-0.5A
Storage Time
tstg
IB=-0.5A
Fall Time
tf
MIN TYP MAX UNIT
-10 µA
1
µA
-1
V
-1.5 V
100
40
MHZ
230
PF
135
nS
500
nS
100
nS
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R203-003,B