D313 Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN EPITAXIAL PLANAR TRANSISTOR

UTC D313
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC D313 is designed for use in general purpose
amplifier and switching applications.
1
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Storage Temperature
Junction Temperature
T_STG
Tj
VALUE
60
60
5
3
-55 ~ +150
150
UNIT
V
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO
IC=1mA
Collector-Emitter Breakdown Voltage BVCEO
IC=10mA
Emitter-Base Breakdown Voltage
BVEBO
IE=100uA
Collector Cut-Off Current
ICBO
VCB=20V, IE=0
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
Collector-Emitter Saturation Voltage VCE(SAT)
IC=2A, IB=0.2A
Base-Emitter On voltage
VBE(ON)
VCE=2V, IC=1A
DC Current Gain
hFE
IC=1A, VCE=2V
IC=0.1A,VCE=2V
MIN TYP MAX UNIT
60
V
60
V
5
V
0.1
mA
1.0
mA
1.0
V
1.5
V
40
320
40
CLASSIFICATION ON hFE
RANK
C
RANGE
40-80
D
60-120
E
100-200
F
160-320
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R203-001,A