BU508AFI_15 Datasheet, PDF (1/2 Pages) Unisonic Technologies – SILICON DIFFUSED POWER TRANSISTOR

UTCBU508AFI NPN EPITAXIAL SILICON TRANSISTOR
SILICON DIFFUSED POWER
TRANSISTOR
DESCRIPTION
The UTC BU508AFI is high voltage, high speed switching
NPN transistors in a plastic envelope, primarily for use in
horizontal deflection circuites of colour television receivers.
Features
* TV color horizontal deflection.
* With TO-3PML fully isolated package.
TO-3PML
1. BASE
2. COLLECTOR
3. EMITTER
123
Absolute Maximum Rating Tc=25°C
PARAMETER
SYMBOL
Collector-base voltage(VBE=0)
VCBO
Collector-emitter voltage(IB=0)
VCEO
Emitter-base Voltage(IC=0)
VEBO
Collector peak current
Icp
Collector current
Ic
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
VALUE
1500
700
10
15
8
60
150
-65~150
ELECTRICAL CHARACTERISTICS Tc=25°C
PARAMETER
SYMBOL
Collector-base cut off current
ICBO
Emitter-base cut off current
IEBO
Collector-emitter Sustaining voltage
VCEO(sus)
Emitter-base breakdown voltage
VEBO
Collector-emitter saturation voltage
VCE(SAT)
Base-emitter saturation voltage
VBE(SAT)
Base current peak value
HFE
TEST CONDITIONS
VcE=1500V, VBE=0
VEB=5V, IC=0
IC=100mA, IB=0
IE=10mA, IC=0
IC=4.5A, IB=2A
IC=4.5A, IB=2A
IC=100mA, VCE=5V
UNIT
V
V
V
A
A
W
°C
°C
MIN MAX UNIT
2.0 mA
100 uA
700
V
10
V
1.0 V
1.3 V
6 30
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R214-001,A