BU407 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH CURRENT NPN SILICON TRANSISTOR

UTC BU407
NPN EXPITAXIAL PLANAR TRANSISTOR
NPN EXPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC BU407 is a NPN expitaxial planar transistor,
designed for use in TV Horizontal output and switching
applications.
FEATURE
1
*High breakdown voltage
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector Base Voltage
Collector to Emitter Voltage
Emitter To Base Voltage
Collector Current
Base Current
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Pc
Tj
Tstg
VALUE
330
150
6
7
4
60
150
-50 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage
BVCEO
IC=100mA, IB=0
150
V
Collect Cutoff Current
ICES
VCE=400V
5
mA
Emitter Cutoff Current
IEBO
VBE=6V, Ic=0
1
mA
Collector-Emitter Saturation Voltage
VCE(sat) IC=5A, IB=0.5A
1
V
Base-Emitter On Voltage
VBE(sat) IC=5A, IB=0.5A
1.2
V
DC Current Gain
HFE1
IC=500mA, VCE=5V
25
HFE2
IC=2A, VCE=5V
35
200
HFE3
IC=5A, VCE=5V
10
Current Gain Bandwidth Product
fT
Ic=500mA, V_CE=10V
10
f=1MHz
MHz
CLASSIFICATION OF hFE2
RANK
B
RANGE
35-85
C
75-125
D
115-200
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R203-020,A