BT151 Datasheet, PDF (1/5 Pages) NXP Semiconductors – Thyristors

UTC BT151
SCR
SCRs
DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage
capability and high thermal cycling performance. Typical
applications include motor control, industrial and domestic
lighting, heating and static switching.
SYMBOL
1
A
K
TO-220
G
1: CATHODE 2: ANODE 3: GATE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
RATING UNIT
Repetitive peak off-state voltages
BT151-500
BT151-650
VDRM , VRRM
500*
650*
V
BT151-800
800
Average on-state current
(half sine wave; Tmb ≤109 °C)
IT(AV)
7.5
A
RMS on-state current (all conduction angles)
IT(RMS)
12
A
Non-repetitive peak on-state current
(half sine wave; Tj = 25 °C prior to surge)
t = 10 ms
ITSM
A
100
t = 8.3 ms
I²t for fusing (t = 10 ms)
110
I²t
50
A²s
Repetitive rate of rise of on-state current after triggering
(ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/ms)
dIT /dt
50
A/μs
Peak gate current
IGM
2
A
Peak gate voltage
VGM
5
V
Peak reverse gate voltage
VRGM
5
V
Peak gate power (over any 20 ms period)
PGM
5
W
Average gate power
Storage temperature
Operating junction temperature
PG(AV)
Tstg
Tj
0.5
W
-40~150
℃
125
℃
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15A/µs.
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R301-007,B