BT150 Datasheet, PDF (1/5 Pages) NXP Semiconductors – Thyristors logic level

UTC BT150
SCRs
DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage
capability and high thermal cycling performance. Typical
applications include motor control, industrial and domestic
lighting, heating and static switching.
SYMBOL
1
A
K
TO-220
G
1: CATHODE 2: ANODE 3: GATE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
RATING
UNIT
Repetitive peak off-state voltages
BT150-500
BT150-650
VDRM , VRRM
500*
650*
V
BT150-800
800
Average on-state current
(half sine wave; Tmb ≤113 °C)
IT(AV)
2.5
A
RMS on-state current
(all conduction angles)
IT(RMS)
4
A
Non-repetitive peak on-state current
(half sine wave; Tj = 25 °C prior to surge)
t = 10 ms
ITSM
35
A
t = 8.3 ms
I²t for fusing (t = 10 ms)
38
I²t
6.1
A²s
Repetitive rate of rise of on-state current after triggering
(ITM = 10 A; IG = 50 mA; dIG /dt = 50 mA/ms)
dIT /dt
50
A/μs
Peak gate current
IGM
2
A
Peak gate voltage
VGM
5
V
Peak reverse gate voltage
VRGM
5
V
Peak gate power (over any 20 ms period)
PGM
5
W
Average gate power
Storage temperature
Operating junction temperature
PG(AV)
Tstg
Tj
0.5
W
-40~150
℃
125**
℃
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15A/µs.
** Note: operation above 110℃ may require the use of a gate to cathode resistor of 1kΩ or less.
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
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