BT136E Datasheet, PDF (1/5 Pages) NXP Semiconductors – TRIACS SENSITIVE GATE

UTC BT136E
TRIACS
DESCRIPTION
Passivated triacs in a plastic envelope, intended for use in
applications requiring high bidirectional transient and blocking
voltage capability and high thermal cycling performance. Typical
applications include motor control, industrial and domestic
lighting, heating and static switching.
SYMBOL
1
MT2
TRIAC
TO-220
G
MT1
1:MT1 2:MT2 3:GATE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive peak off-state voltages
BT136-600
600*
BT136-800
VDRM
800
V
RMS on-state current
full sine wave; Tmb ≤107 °C
IT(RMS)
4
A
Non-repetitive peak on-state current
(Full sine wave; Tj = 25 °C prior to surge)
t = 20ms
t = 16.7 ms
I²t for fusing
t = 10 ms
ITSM
I²t
25
A
27
A²s
3.1
Repetitive rate of rise of on-state current after triggering
ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/μs
T2+G+
T2+G-
T2-G-
T2-G+
50
dIT /dt
50
50
10
A/μs
Peak gate voltage
VGM
5
V
Peak gate current
IGM
2
A
Peak gate power
PGM
5
W
Average gate power (over any 20 ms period)
Storage temperature
Operating junction temperature
PG(AV)
0.5
W
Tstg
-40 ~ 150
℃
Tj
125
℃
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch
to the on-state. The rate of rise of current should not exceed 3A/µs.
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R401-005,A