BSS138_15 Datasheet, PDF(1/4 Page) Diodes Incorporated – 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23

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BSS138_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23

UNISONIC TECHNOLOGIES CO., LTD

BSS138

N-CHANNEL LOGIC LEVEL

ENHANCEMENT MODE

ï® DESCRIPTION

This device employs advanced MOSFET technology and

features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the

overall efficiency of DC/DC converters and allows operation to higher

switching frequencies.

ï® FEATURES

* RDS(ON) < 3.5â¦ @ VGS=10 V, ID=0.22A

* RDS(ON) < 6.0â¦ @ VGS=4.5 V, ID=0.22A

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* Avalanche Energy Specified

ï® SYMBOL

3.Drain

Power MOSFET

2.Gate

1.Source

ï® ORDERING INFORMATION

Ordering Number

BSS138G-AE2-R

BSS138G-AL3-R

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

SOT-23-3

SOT-323

Pin Assignment

Packing

Tape Reel

ï® MARKING

www.unisonic.com.tw

1 of 3

QW-R502-271.F

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