BF488 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP high-voltage transistor

UTC BF488
PNP HIGH-VOLTAGE TRANSISTORS
PNP HIGH-VOLTAGE
TRANSISTORS
FEATURES
*Low feedback capacitance.
APPLICATIONS
*Intended for use in video output stages of black and white
1
and color television receivers.
TO-92
ABSOLUTE MAXIMUM RATINGS
PARAMETERS
SYMBOL
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current (DC)
Ic
Peak collector current
IcP
Peak base current
IBP
Collector dissipation
Pc
Ta≦25°C (note 1)
Junction temperature
Tj
Storage temperature
Tstg
Operating ambient temperature
Tamb
Note 1: transistor mounted on a printed-circuit board.
1:EMITTER 2:COLLECTOR 3:BASE
RATING
-350
-350
-5
-100
-200
-100
830
150
-65~+150
-65~+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
PARAMETERS
Thermal resistance from junction to ambient
SYMBOL
Rth j-a
CONDITIONS VALUE
NOTE 1
150
UNIT
K/W
ELECTRICAL CHARACTERISTICS(Tj=25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector cut-off current
ICBO VCB= -300V, IE=0
VCB= -200V, IE=0, Tj=150°C
Emitter cut-off current
IEBO VEB= -5V, Ic=0
DC current gain
hFE
VCE= -20V ,Ic= -25mA
50
VCE= -20V ,Ic= -40mA
20
MAX
-20
-20
-100
UNIT
nA
µA
nA
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R201-059,A