BF423_15 Datasheet, PDF (1/3 Pages) Unisonic Technologies – PNP HIGH-VOLTAGE TRANSISTORS

UTC BF423
PNP HIGH-VOLTAGE TRANSISTORS
PNP HIGH-VOLTAGE
TRANSISTORS
FEATURES
*Collector-Emitter Voltage: VCEO=-250V.
APPLICATIONS
* High voltage application.
1
* Monitor equipment application.
TO-92
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified)
PARAMETERS
SYMBOL
RATING
Collector-base voltage
VCBO
-250
Collector-emitter voltage
VCEO
-250
Emitter-base voltage
VEBO
-5
Collector current (DC)
Ic
-50
collector current (Peak)
IcP
-100
base current
IB
-50
Collector Power dissipation
Pc
625
Junction temperature
Tj
150
Storage Temperature
Tstg
-65~+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETERS
SYMBOL
CONDITIONS
MIN
Collector Cut-Off Current
ICBO
VCB= -200V, IE=0
VCB= -200V, IE=0, Tj=150°C
Emitter Cut-Off Current
IEBO
VEB= -5V, Ic=0
DC current gain
hFE
VCE=-20V, Ic=-25mA
50
Collector-emitter saturation voltage VCE(sat)
Ic= -30mA, IB= -5mA
Transition frequency
fT
VCE= -10V ,Ic= -10mA, f=100MHz 60
Feedback capacitance
Cre
VCB= -30V, IE=0 f=1MHz
MAX
-10
-10
-50
UNIT
nA
µA
nA
-0.6
V
MHz
1.6
pF
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R201-058,A