BF422 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER,COLOR TV CHROMA OUTPUT)

UTC BF422
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter Voltage: VCEO=250V.
*Complementary to BF423.
APPLICATIONS
* High voltage application.
* Monitor equipment application.
1
TO-92
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETERS
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-base voltage
VEBO
Collector current (DC)
Ic
collector current (Peak)
IcP
base current
IB
Collector Power dissipation
Pc
Junction temperature
Tj
Storage Temperature
Tstg
1: EMITTER 2: COLLECTOR 3: BASE
RATINGS
250
250
5
50
100
50
625
150
-65~+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETERS
SYMBOL
CONDITIONS
MIN.
Collector Cut-Off Current
ICBO
VCB= 200V, IE=0
VCB=-200V, IE=0, Tj=150°C
Emitter Cut-Off Current
IEBO VEB= 5V, Ic=0
DC current gain
hFE VCE=20V, Ic=25mA
50
Collector-Emitter Saturation Voltage VCE(sat) Ic= 30mA, IB= 5mA
Base-Emitter Voltage
VBE VCE=-20V,Ic=25mA
Transition frequency
fT
VCE= 10V ,Ic= 10mA
60
Reverse Transfer Capacitance
Cre VCB= 30V, IE=0, f=1MHz
TYP.
0.75
MAX.
10
10
50
UNIT
nA
µA
nA
0.6
V
V
MHz
1.6 pF
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R201-063,A