BD139 Datasheet, PDF (1/2 Pages) Unisonic Technologies – NPN POWER TRANSISTORS

UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR
NPN POWER TRANSISTORS
FEATURES
*High current (max.1.5A)
*Low voltage (max.80V)
APPLICATION
*Driver stages in hi-fi amplifiers and television circuits.
1
TO-126
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL CONDITIONS
MIN
Collector-base voltage
VCBO
Open emitter
-
Collector-emitter voltage
VCEO
Open base
-
Emitter-base voltage
VEBO
Open collector
-
Collector current(DC)
Ic
-
Peak collector current
lcM
-
Peak base current
Total power dissipation
lBM
-
Ptot
Tmb≤70°C
-
Storage Temperature
Tstg
-65
Junction Temperature
Tj
-
Operating ambient temperature
Tamb
-65
MAX
100
80
5
1.5
2
1
8
+150
+150
+150
THERMAL CHARACTERISTICS
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
SYMBOL
Rth j-a
Rth j-mb
CONDITIONS
Note1
VALUE
100
10
Note 1: Refer to TO-126 standard mounting conditions.
UNIT
V
V
V
A
A
A
W
°C
°C
°C
UNIT
K/W
K/W
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R204-007,A