BD136 Datasheet, PDF (1/2 Pages) Motorola, Inc – Plastic Medium Power Silicon PNP Transistor

UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC BD136/BD138/BD140 are silicon epitaxial
planer PNP transistor ,designed for use as audio amplifiers
and drivers utilizing complementary or quasi complementary
circuits.
The complementary NPN types are the BD135/BD137/
BD139.
1
TO-126
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Dissipation
Storage Temperature
Operating Junction Temperature
BD136
BD138
BD140
BD136
BD138
BD140
(Tc≦25°C)
(Ta≦25°C)
V_CBO
V_CEO
V_EBO
Ic
IcM
I_B
Ptot
Tstg
Tj
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
SYMBOL
θ_jc
θ_jA
1:EMITTER 2:COLLECTOR 3:BASE
RATING
UNIT
-45
-60
V
-80
-45
-60
V
-80
-5
V
-1.5
V
-3
A
-0.5
A
12.5
W
1.25
W
-65 ~ 150
°C
150
°C
MAX
10
100
UNIT
°C/W
°C/W
UTC
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