BCX70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

UTC BCX70
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
MARKING
2
CG
1
3
SOT-23
1: Emitter 2: Base 3: Collector
*Pb-free plating product number: BCX70L
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃ unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_STG
RATINGS
45
45
5
200
350
-40 ~ +150
UNIT
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(Ta = 25℃ unless otherwise noted)
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time
SYMBOL
BV_CEO
BV_EBO
I_CES
I_EBO
h_FE
V_{CE (sat)}
V_{BE (sat)}
V_{BE (on)}
f_T
C_ob
NF
t_ON
t_OFF
TEST CONDITIONS
I_C=2.0mA, I_B=0
I_E=1.0µF, I_C=0
V_CE=32V, V_BE=0
V_EB=4V, I_C=0
V_CE=5V, I_C=10µA
V_CE=5V, I_C=2.0mA
V_CE=1V, I_C=50mA
I_C=10mA, I_B=0.25mA
I_C=50mA, I_B=1.25mA
I_C=10mA, I_B=0.25mA
I_C=50mA, I_B=1.25mA
I_C=2.0mA, V_CE=5V
I_C=10mA, V_CE=5V, f=100MHz
V_CB=10V, I_E=0, f=1MHz
V_CE=5V, I_C=0.2mA, R_S=2KΩ
f=1KHz
I_C=10mA, I_B1=1.0mA
V_BB=3.6V, I_B2=1.0mA, R₁=R₂=5KΩ
R_L=990Ω
MIN
45
5
100
380
100
0.6
0.7
0.55
125
TYP MAX
20
20
630
0.35
0.55
0.85
1.05
0.75
4.5
6
150
800
UNIT
V
V
nA
nA
V
V
V
V
V
MHz
P^F
dB
ns
ns
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
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QW-R206-080,A