BCP68 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN medium power transistor

UTC BCP68 NPN EPITAXIAL SILICON TRANSISTOR
NPN MEDIUM POWER
TRANSISTOR
FEATURES
* High current (max. 1 A)
* Low voltage (max. 20 V)
* Complementary to UTC BCP69
APPLICATIONS
* General purpose switching and amplification under high
current conditions.
1
SOT-223
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage(Open Base)
Emitter-Base Voltage(Open Collector)
Collector Current (DC)
Peak Collector Current
Peak Base Current
Total Power Dissipation, Ta ≤ 25℃
Operating Ambient Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
Ta
Junction Temperature
T_j
Storage Temperature
T_stg
RATINGS
32
20
5
1
2
200
1.37
-65 ~ +150
150
-65 ~ +150
UNIT
V
V
V
A
A
mA
W
℃
℃
℃
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS RATINGS UNIT
Thermal Resistance From Junction To Ambient
R_{th j-a} Note 1
91
K/W
Thermal Resistance From Junction To Soldering Point R_{th j-s}
10
K/W
Note 1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R207-008,B